a p50t10gh/j-hf advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v lower gate charge r ds(on) 30m fast switching characteristic i d 37a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 4 mj i ar avalanche current 1 a e ar repetitive avalanche energy 1 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.4 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice halogen-free product 60 20 8.9 parameter rating drain-source voltage 100 gate-source voltage + 20 continuous drain current, v gs @ 10v 37 storage temperature range continuous drain current, v gs @ 10v 23 pulsed drain current 1 120 total power dissipation 89.2 -55 to 150 total power dissipation 3 2 operating junction temperature range -55 to 150 201411284 thermal data parameter 1 maximum thermal resistance, junction-ambient (pcb mount) 3 g d s g d s to-252(h) g d s to-251(j) a p50t10 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-252 package is widely preferred for all commercial- industrial surface mount applications using infrared reflo w technique and suited for high current application due to the lo w connection resistance. the through-hole version (ap50t10gj) is available for low-profile applications. .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =24a - - 30 m v gs =5v, i d =16a - - 70 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =24a - 30 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =24a - 42 67 nc q gs gate-source charge v ds =80v - 8 - nc q gd gate-drain ("miller") charge v gs =10v - 19 - nc t d(on) turn-on delay time v ds =50v - 11 - ns t r rise time i d =24a - 42 - ns t d(off) turn-off delay time r g =1 -26- ns t f fall time v gs =10v - 8.5 - ns c iss input capacitance v gs =0v - 1840 2940 pf c oss output capacitance v ds =25v - 190 - pf c rss reverse transfer capacitance f=1.0mhz - 130 - pf r g gate resistance f=1.0mhz - 1.7 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =24a, v gs =0v - - 1.3 v t rr reverse recovery time i s =10a, v gs =0v - 40 - ns q rr reverse recovery charge di/dt=100a/s - 80 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board 4.starting t j =25 o c, v dd =50v, l=0.3mh, r g =25 , i as =20a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap50t10gh/j-hf .
a p50t10gh/j-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 0 4 8 12 16 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 20 40 60 80 0 4 8 12 16 20 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g = 4.0v t c = 150 o c 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =24a v g =10v 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) 20 30 40 50 60 70 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =16a t c =25 o c i d =250ua .
ap50t10gh/j-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 10 12 0 1020304050 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =50v v ds =60v v ds =80v i d =24a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0 1000 2000 3000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) .
ap50t10gh/j-hf marking information to-252 to-251 5 part numbe r package code date code (ywwsss) y last digit of the year ww week sss sequence 50t10gh ywwsss meet rohs requirement for low voltage mosfet only part numbe r package code meet rohs requirement for low voltage mosfet only 50t10gj ywwsss date code (ywwsss) y last digit of the year ww week sss sequence .
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